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Datasheet File OCR Text: |
PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. H558 APPLICATIONS SWITCHING AND AMPLIFIER ABSOLUTE MAXIMUM RATINGS a=25ae(c) T TO-92 T stg Storage Temperature----------55~150ae T j Junction Temperature------------150ae PCCollector Dissipation------------500mW VCBO Collector-Base Voltage------------30V VCEO Collector-Emitter Voltage-----------30V VE B O Emitter- Base Voltage------------5V IC Collector Current--------------100mA 1D Collector C 2D Base B 3D Emitter E ELECTRICAL CHARACTERISTICS a=25ae(c) T Characteristics Min Typ Max Unit Test Conditions Symbol BVCBO BVCEO BVEBO ICBO HFE VCE(sat1) VCE(sat2) VBE(sat1) VBE(sat2) VBE(ON1) VBE(ON2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product Output Capacitance - 30 - 30 -5 - 15 110 - 90 - 250 - 0.7 - 0.9 - 660 150 6 - 750 - 800 800 - 300 - 650 V V V nA IC=-100|I IE=0 A, IC=-10mA, IB=0 IE=-100|I IC=0 A VCB=-30V, IE=0 VCE=-5V, IC=-2mA mV IC=-10mA, IB=-0.5mA mV IC=-100mA, IB=-5mA V V IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA mV VCE=-5V, IC=-2mA mV VCE=-5V, IC=-10mA MHz VCE=-5V,IC=-10mA,f=1MHz pF VCB=-10V, IE=0 f=1MHz fT Cob hFE Classification A 110 220 B 200 450 C 420 800 Shantou Huashan Electronic Devices Co.,Ltd. H558 |
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